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| inchange semiconductor isc product specification isc silicon pnp power transistor MJW21191 description dc current gain high area of safe operation applications designed for power audio output, or high power drivers in audio amplifiers. absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-emitter voltage -150 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current-continuous -8 a i cm collector current-pulsed -16 a i b b base current-continuous -2 a p d total power dissipation (t c =25 ) 100 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermalresistance junction to case 0.65 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor MJW21191 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-10ma; i b =0 -150 v v ce (sat)-1 collector-emitter saturation voltage i c =-4a ;i b =-0.4a b -1.0 v v ce (sat)-2 collector-emitter saturation voltage i c =-8a ;i b =-1.6a b -2.0 v v be (on) base-emitter on voltage i c =-4a ; v ce =-2v -2 v i ces collector cutoff current v ce = -250v; i e =0 -10 a i ebo emitter cutoff current v eb =-5v; i c =0 -10 a h fe-1 dc current gain i c =-4a; v ce =-2v 15 100 h fe-2 dc current gain i c =-8a; v ce =-2v 5 f t current gain-bandwidth product i c =-1a ;v ce =-10v; f test =1mhz 4 mhz isc website www.iscsemi.cn 2 |
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